Bridgeman technique

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The Bridgman technique is a method of growing single crystal ingots or boules.

The method involves heating polycrystalline material in a container above its melting point and slowly cooling it from one end where a seed crystal is located. Single crystal material is progressively formed along the length of the container. The process can be carried out in a horizontal or vertical geometry.

It is a popular method of producing certain semiconductor crystals, such as gallium arsenide where the Czochralski process is more difficult.

See also

nl:Bridgeman-methode


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